Paper Title:
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
  Abstract

Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a great interest for power devices, particularly for SiC high-voltage Schottky barrier rectifiers. The main difference to ultra fast Si pin diodes lies in the absence of reverse recovery charge in SiC SBDs. This paper reports on 4.5kV-8A SiC Schottky diodes / Si-IGBT modules. The Schottky termination design and the fabrication process gives a manufacturing yield of 40% for large area devices on standard starting material. Modules have been successfully assembled, containing Si-IGBTs and 4.5kV-SiC Schottky diodes and characterized in both static and dynamic regimes. The forward dc characteristics of the modules show an on-resistance of 33mohm.cm2 @ room temperatue (RT) and a very low reverse leakage current density (JR < 10 5A/cm2 @ 3.5kV). An experimental breakdown voltage higher than 4.7kV has been measured in the air on polyimide passivated devices. This value corresponds to a junction termination efficiency of at least 80% according to the epitaxial properties. These SiC SBDs are well suited for high voltage, medium current, high frequency switching aerospace applications, matching perfectly as freewheeling diodes with Si IGBTs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1163-1166
DOI
10.4028/www.scientific.net/MSF.527-529.1163
Citation
D. Tournier, P. Waind, P. Godignon, L. Coulbeck, J. Millan, R. Bassett, "4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules", Materials Science Forum, Vols. 527-529, pp. 1163-1166, 2006
Online since
October 2006
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$32.00
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