Paper Title:
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
  Abstract

The defects formation in ion-irradiated 4H-SiC was investigated and correlated with the electrical properties of Schottky diodes. The diodes were irradiated with 1 MeV Si+-ions, at fluences ranging between 1×109cm-2 and 1.8×1013cm-2. After irradiation, the current-voltage characteristics of the diodes showed an increase of the leakage current with increasing ion fluence. The reverse I-V characteristics of the irradiated diodes monitored as a function of the temperature showed an Arrhenius dependence of the leakage, with an activation energy of 0.64 eV. Deep level transient spectroscopy (DLTS) allowed to demonstrate that the Z1/Z2 center of 4H-SiC is the dominant defect in the increase of the leakage current in the irradiated material.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1167-1170
DOI
10.4028/www.scientific.net/MSF.527-529.1167
Citation
V. Raineri, F. Roccaforte, S. Libertino, A. Ruggiero, V. Massimino, L. Calcagno, "Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes", Materials Science Forum, Vols. 527-529, pp. 1167-1170, 2006
Online since
October 2006
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