Paper Title:
Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
  Abstract

In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with 6.6-ns rise time, 7.6-ns fall time, 4.8-ns turn-on and 5.4-ns turn-off delay time at 2.5 A drain current (IDS), which corresponds to a maximum switching frequency of 41 MHz – the fastest ever reported switching of SiC JFETs to our knowledge. At IDS of 12 A, a 19.1 MHz maximum switching frequency has been also achieved. Specific on-resistance (Rsp-on) in the linear region is 2.5 m·cm2 at VGS of 3 V. The drain current density is greater than 1410 A/cm2 at 9 V drain voltage. High-temperature operation of the 4H-SiC VJFETs has also been investigated at temperatures from 25 °C to 225 °C. Changes in the on-resistance with temperature are in the range of 0.90~1.33%/°C at zero gate bias and IDS of 50 mA. The threshold voltage becomes more negative with a negative shift of 0.096~0.105%/°C with increasing temperature.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1183-1186
DOI
10.4028/www.scientific.net/MSF.527-529.1183
Citation
L. Cheng, J. R. B. Casady, M. S. Mazzola, V. Bondarenko, R. L. Kelley, I. Sankin, J. N. Merrett, J. B. Casady, "Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications", Materials Science Forum, Vols. 527-529, pp. 1183-1186, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Praneet Bhatnagar, Nicolas G. Wright, Alton B. Horsfall, Konstantin Vassilevski, C. Mark Johnson, Michael J. Uren, Keith P. Hilton, A.G. Munday, A.J. Hydes
Abstract:4H-SiC depletion mode (normally-on) VJFETs were fabricated and characterised at temperatures up to 377 °C. The device current density at...
799
Authors: Victor Veliadis, Ty McNutt, Megan McCoy, Harold Hearne, Gregory De Salvo, Chris Clarke, Paul Potyraj, Charles Scozzie
Abstract:High-voltage normally-on VJFETs of 0.19 cm2 and 0.096 cm2 areas were manufactured in seven photolithographic levels with no epitaxial...
1047
Authors: Victor Veliadis, Harold Hearne, Ty McNutt, Megan Snook, Paul Potyraj, Charles Scozzie
Abstract:High-voltage vertical-junction-field-effect-transistors (VJFETs) are typically designed normally-on to ensure low-resistance voltage-control...
711
Authors: Andrew Ritenour, David C. Sheridan, Volodymyr Bondarenko, Jeff B. Casady
Abstract:Recently 63 m, 100 m, and 125 m 1200 V normally-off SiC VJFETs have become commercially available and 99% efficiency has been demonstrated...
937
Authors: Ranbir Singh, Stoyan Jeliazkov, Eric Lieser
Chapter 6: SiC Devices, Circuits and Systems
Abstract:1200 V-Class Super-High Current Gain Transistors or SJTs developed by GeneSiC are distinguished by low leakage currents of 2. Two-stage...
1127