Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Casady, Jeff B.; Mazzola, Michael S.; Cheng, Lin; Merrett, J. Neil; Bondarenko, V.; Sankin, Igor; Casady, Janna R. B.; Kelley, Robin L.

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Paper Titles

Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes, p.1167
Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO₂/High-K Dielectric Stack, p.1171
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties, p.1175
Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices, p.1179
Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications, p.1183
10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors, p.1187
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs, p.1191
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET, p.1195
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation, p.1199

Home > Materials Science Forum > Silicon Carbide and Related Materials 2005 > Fast Switching (41 MHz), 2.5 mΩ•cm²,...

Paper Title:

Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications

Periodical	Materials Science Forum (Volumes 527 - 529)
Main Theme	Silicon Carbide and Related Materials 2005
Edited by	Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages	1183-1186
DOI	10.4028/www.scientific.net/MSF.527-529.1183
Citation	Lin Cheng et al., 2006, Materials Science Forum, 527-529, 1183
Online since	October, 2006
Authors	Lin Cheng, Janna R. B. Casady, Michael S. Mazzola, V. Bondarenko, Robin L. Kelley, Igor Sankin, J. Neil Merrett, Jeff B. Casady
Keywords	Fast Switching, High Current, High Frequency, High Power, High Temperature, JFET, Low On-Resistance, Maximum Switching Frequency
Price	US$ 28,-

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Abstract

In this work we have demonstrated the operation of 600-V class 4H-SiC vertical-channel junction field-effect transistors (VJFETs) with 6.6-ns rise time, 7.6-ns fall time, 4.8-ns turn-on and 5.4-ns turn-off delay time at 2.5 A drain current (IDS), which corresponds to a maximum switching frequency of 41 MHz – the fastest ever reported switching of SiC JFETs to our knowledge. At IDS of 12 A, a 19.1 MHz maximum switching frequency has been also achieved. Specific on-resistance (Rsp-on) in the linear region is 2.5 m·cm2 at VGS of 3 V. The drain current density is greater than 1410 A/cm2 at 9 V drain voltage. High-temperature operation of the 4H-SiC VJFETs has also been investigated at temperatures from 25 °C to 225 °C. Changes in the on-resistance with temperature are in the range of 0.90~1.33%/°C at zero gate bias and IDS of 50 mA. The threshold voltage becomes more negative with a negative shift of 0.096~0.105%/°C with increasing temperature.