Paper Title:
Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique
  Abstract

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
119-122
DOI
10.4028/www.scientific.net/MSF.527-529.119
Citation
K. Kusunoki, K. Kamei, N. Okada, N. Yashiro, A. Yauchi, T. Ujihara, K. Nakajima, "Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique", Materials Science Forum, Vols. 527-529, pp. 119-122, 2006
Online since
October 2006
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Price
$32.00
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