Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET

Johnson, C. Mark; O'Neill, Anthony G.; Wright, Nicolas G.; Vassilevski, Konstantin; Horsfall, Alton B.; Bhatnagar, Praneet

Paper Titles

Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices, p.1179
Fast Switching (41 MHz), 2.5 mΩ•cm², High Current 4H-SiC VJFETs for High Power and High Temperature Applications, p.1183
10 kV, 87 mΩcm² Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors, p.1187
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs, p.1191
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET, p.1195
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation, p.1199
Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask, p.1203
SiC Smart Power JFET Technology for High-Temperature Applications, p.1207
Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET, p.1211

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Paper Title:

Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET

Periodical	Materials Science Forum (Volumes 527 - 529)
Main Theme	Silicon Carbide and Related Materials 2005
Edited by	Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages	1195-1198
DOI	10.4028/www.scientific.net/MSF.527-529.1195
Citation	Praneet Bhatnagar et al., 2006, Materials Science Forum, 527-529, 1195
Online since	October, 2006
Authors	Praneet Bhatnagar, Alton B. Horsfall, Nicolas G. Wright, C. Mark Johnson, Konstantin Vassilevski, Anthony G. O'Neill
Keywords	Analytic, Enhancement Mode, Finite Element (FE), Vertical Junction Field Effect Transistor (VJFET)
Price	US$ 28,-

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Abstract

Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6+m to 2.2+m are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.