Paper Title:
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
  Abstract

Physics-based analytical models are seen as an efficient way of predicting the characteristics of power devices since they can achieve high computational efficiency and may be easily calibrated using parameters obtained from experimental data. This paper presents an analytical model for a 4H-SiC Enhancement Mode Vertical JFET (VJFET), based on the physics of this device. The on-state and blocking behaviour of VJFETs with finger widths ranging from 1.6+m to 2.2+m are studied and compared with the results of finite element simulations. It is shown that the analytical model is capable of accurately predicting both the on-state and blocking characteristics from a single set of parameters, underlining its utility as a device design and circuit analysis tool.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1195-1198
DOI
10.4028/www.scientific.net/MSF.527-529.1195
Citation
P. Bhatnagar, A. B. Horsfall, N. G. Wright, C. M. Johnson, K. Vassilevski, A. G. O'Neill, "Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET", Materials Science Forum, Vols. 527-529, pp. 1195-1198, 2006
Online since
October 2006
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Price
$32.00
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