Paper Title:
SiC Smart Power JFET Technology for High-Temperature Applications
  Abstract

Wide bandgap semiconductor materials such as SiC or GaN are very attractive for use in high-power, high-temperature, and/or radiation resistant electronics. Monolithic or hybrid integration of a power transistor and control circuitry in a single or multi-chip wide bandgap power semiconductor module is highly desirable for such applications in order to improve the efficiency and reliability. This paper describes a new monolithic SiC JFET IC technology for high-temperature smart power applications that allows for on-chip integration of control circuitry and normally-off power switch. In order to demonstrate the feasibility of this technology, hybrid logic gates with maximum switching frequency > 20 MHz and normally-off 900 V power switch have been fabricated on alumina substrates using discrete enhanced and depletion mode vertical trench JFETs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1207-1210
DOI
10.4028/www.scientific.net/MSF.527-529.1207
Citation
I. Sankin, V. Bondarenko, R. L. Kelley, J. B. Casady, "SiC Smart Power JFET Technology for High-Temperature Applications", Materials Science Forum, Vols. 527-529, pp. 1207-1210, 2006
Online since
October 2006
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Price
$32.00
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