Paper Title:
SiC MESFET with a Double Gate Recess
  Abstract

In order to increase the output power and drain efficiency, MESFETs in SiC have been made with a double gate recess technique. Typical device characteristics of the MESFETs are drain currents of 380mA/mm, breakdown voltages of 80V and ft/fmax of 10/25 GHz respectively. These transistors exhibit power densities of 3W/mm@3GHz in class AB operation and drain efficiencies of 60%. Packaged devices with 3 mm gate periphery of this type, with via-hole grounding, gave power densities of 1.2 W/mm@6GHz at 50 V drain bias.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1227-1230
DOI
10.4028/www.scientific.net/MSF.527-529.1227
Citation
P. Å. Nilsson, N. Rorsman, M. Südow, K. Andersson, H. Hjelmgren, H. Zirath, "SiC MESFET with a Double Gate Recess", Materials Science Forum, Vols. 527-529, pp. 1227-1230, 2006
Online since
October 2006
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Price
$32.00
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