Paper Title:
Growth of Cubic Silicon Carbide Crystals from Solution
  Abstract

Cubic-silicon carbide crystals have been grown from solution by using the traveling-zone method. In this technique a molten silicon zone heated by induction coils is held between two rods of polycrystalline silicon carbide. Due to the growth set-up and boundary conditions, different mass transfer mechanisms are operative : diffusion, buoyancy, Marangoni convection and forced convection. The growth experiments have been performed on various seed crystals. Cubic SiC crystals were grown with a [111] habit on the [0001] silicon faces of 4H SiC seeds. The polytype 3C-SiC was identified by Transmission Electron Microscopy. Micro Raman spectroscopy and photoluminescence analyses showed good crystalline quality with few 6H inclusions.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
123-126
DOI
10.4028/www.scientific.net/MSF.527-529.123
Citation
J. Eid, J. L. Santailler, B. Ferrand, P. Ferret, J. Pesenti, A. Basset, A. Passero, A. Mantzari, E. K. Polychroniadis, C. Balloud, P. Soares, J. Camassel, "Growth of Cubic Silicon Carbide Crystals from Solution", Materials Science Forum, Vols. 527-529, pp. 123-126, 2006
Online since
October 2006
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$32.00
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