Paper Title:
Optimum Design of Short-Channel 4H-SiC Power DMOSFETs
  Abstract

We describe an optimized design for the 1 kV short-channel 4H-SiC power DMOSFET, obtained from numerical simulations using the Taguchi method. Three new structural features are employed: (1) a current spreading layer (CSL) below the p-well, (2) a heavily-doped, narrow JFET region, and (3) a segmented p-well contact.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1269-1272
DOI
10.4028/www.scientific.net/MSF.527-529.1269
Citation
A. Saha, J. A. Cooper, "Optimum Design of Short-Channel 4H-SiC Power DMOSFETs", Materials Science Forum, Vols. 527-529, pp. 1269-1272, 2006
Online since
October 2006
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Price
$32.00
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