Paper Title:
Realization of Large Area Vertical 3C-SiC MOSFET Devices
  Abstract

Vertical DMOSFET devices with varying size from single cell to 3x3 mm2 large devices have been realized. The investigated devices had hexagonal and square unit cell designs with 2 $m and 4 $m channel length. The p-body was aluminum implanted and the source was nitrogen or phosphorus implanted. Low temperature Ti/W contacts were evaluated.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1273-1276
DOI
10.4028/www.scientific.net/MSF.527-529.1273
Citation
A. Schöner, M. Bakowski, P. Ericsson, H. Strömberg, H. Nagasawa, M. Abe, "Realization of Large Area Vertical 3C-SiC MOSFET Devices", Materials Science Forum, Vols. 527-529, pp. 1273-1276, 2006
Online since
October 2006
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