High Power-Density 4H-SiC RF MOSFETs |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1277-1280 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1277 |
| Citation | G. Gudjónsson et al., 2006, Materials Science Forum, 527-529, 1277 |
| Online since | October, 2006 |
| Authors | G. Gudjónsson, Fredrik Allerstam, H.Ö. Ólafsson, Per Åke Nilsson, Hans Hjelmgren, Kristoffer Andersson, Einar Ö. Sveinbjörnsson, Herbert Zirath, T. Rödle, R. Jos |
| Keywords | 4H-SiC, High Frequency, High Power, RF MOSFET |
| Abstract | We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs. |
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