Paper Title:
High Power-Density 4H-SiC RF MOSFETs
  Abstract

We have made a 4H-SiC RF power MOSFETs with cutoff frequency up to 12 GHz, delivering RF power of 1.9 W/mm at 3 GHz. The transistors withstand 200 V drain voltage, are normally-off, and show no gate lag, which is often encountered in SiC MESFETs. The measured devices have a single drain finger and a double gate finger and a total gate width of 0.8 mm. To our knowledge this is the first time that power densities above 1 W/mm at 3 GHz are reported for SiC MOSFETs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1277-1280
DOI
10.4028/www.scientific.net/MSF.527-529.1277
Citation
G. Gudjónsson, F. Allerstam, H.Ö. Ólafsson, P. Å. Nilsson, H. Hjelmgren, K. Andersson, E. Ö. Sveinbjörnsson, H. Zirath, T. Rödle, R. Jos, "High Power-Density 4H-SiC RF MOSFETs", Materials Science Forum, Vols. 527-529, pp. 1277-1280, 2006
Online since
October 2006
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Price
$32.00
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