Paper Title:
Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
  Abstract

4H-SiC epilayer channel MOSFETs are fabricated. The MOSFETs have an n- epilayer channel which improves the surface where the MOS channel is formed. By the optimization of the epilayer channel and the MOSFET cell structure, an ON-resistance of 12.9 mcm2 is obtained at VG = 12 V (Eox = 2.9 MV/cm). A normally-OFF operation and stable avalanche breakdown is obtained at the drain voltage larger than 1.2 kV. Both the ON-resistance and the breakdown voltage increase slightly with an increase in temperature. This behavior is favorable for high power operation. By the evaluation of the control MOSFETs with n+ implanted channel, the resistivity of the MOS channel is estimated. The MOS channel resistivity is proportional to the channel length and it corresponds to an effective channel mobility of about 20 cm2/Vs.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1285-1288
DOI
10.4028/www.scientific.net/MSF.527-529.1285
Citation
Y. Tarui, T. Watanabe, K. Fujihira, N. Miura, Y. Nakao, M. Imaizumi, H. Sumitani, T. Takami, T. Ozeki, T. Oomori, "Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET", Materials Science Forum, Vols. 527-529, pp. 1285-1288, 2006
Online since
October 2006
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Price
$32.00
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