Paper Title:
Switching Characteristics of SiC-MOSFET and SBD Power Modules
  Abstract

Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1289-1292
DOI
10.4028/www.scientific.net/MSF.527-529.1289
Citation
M. Imaizumi, Y. Tarui, S. I. Kinouchi, H. Nakatake, Y. Nakao, T. Watanabe, K. Fujihira, N. Miura, T. Takami, T. Ozeki, "Switching Characteristics of SiC-MOSFET and SBD Power Modules", Materials Science Forum, Vols. 527-529, pp. 1289-1292, 2006
Online since
October 2006
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Price
$32.00
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