Paper Title:
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
  Abstract

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Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1293-1296
DOI
10.4028/www.scientific.net/MSF.527-529.1293
Citation
H. Nakao, H. Mikami, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, "Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls", Materials Science Forum, Vols. 527-529, pp. 1293-1296, 2006
Online since
October 2006
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Price
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