Paper Title:
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
  Abstract

This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1), (1-100) and (0-33-8) using 4H-SiC (11-20) substrates. Deposited poly-Si was oxidized in wet ambient to form the gate oxide, and annealed in N2O (10%) ambient. The order of drain current of trench sidewall MOSFETs was (0-33-8) > (1-100) > (000-1) = (0001). We could gain comparatively high channel mobility on the (0-33-8) face. The maximum effective channel mobility (μeff) was 35cm2/Vs, and μeff at 2.5MV/cm was 29 cm2/Vs on the (0-33-8) face.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1297-1300
DOI
10.4028/www.scientific.net/MSF.527-529.1297
Citation
H. Fujisawa, T. Tsuji, M. Nishiura, "The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates", Materials Science Forum, Vols. 527-529, pp. 1297-1300, 2006
Online since
October 2006
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Price
$32.00
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