This paper reports the channel mobilities of MOSFETs formed on the trench sidewalls with different crystal faces including (0001), (000-1), (1-100) and (0-33-8) using 4H-SiC (11-20) substrates. Deposited poly-Si was oxidized in wet ambient to form the gate oxide, and annealed in N2O (10%) ambient. The order of drain current of trench sidewall MOSFETs was (0-33-8) > (1-100) > (000-1) = (0001). We could gain comparatively high channel mobility on the (0-33-8) face. The maximum effective channel mobility (μeff) was 35cm2/Vs, and μeff at 2.5MV/cm was 29 cm2/Vs on the (0-33-8) face.