Paper Title:
Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
  Abstract

SiC lateral MOSFETs with multi-RESURF structures have been fabricated by a self-aligned process. The “multi-RESURF” means “double RESURF” and “buried-p RESURF” structures, which have the buried-p region at the top and at the middle of RESURF region, respectively. The increase of net RESURF dose and the decrease of channel length lead to the reduced on-resistance. The “buried-p RESURF” MOSFETs have higher on-resistances than the “double RESURF” MOSFETs, due to the resistance of parasitic JFET inside the RESURF region. The dose designing for double RESURF MOSFETs has been optimized by using device simulation. A double RESURF MOSFET exhibits a breakdown voltage of 750 V and an on-resistance of 52 m/cm2.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1305-1308
DOI
10.4028/www.scientific.net/MSF.527-529.1305
Citation
M. Noborio, Y. Negoro, J. Suda, T. Kimoto, "Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs", Materials Science Forum, Vols. 527-529, pp. 1305-1308, 2006
Online since
October 2006
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$32.00
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