Paper Title:
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
  Abstract

A passivation annealing in nitric oxide (NO) ambient significantly reduces the interfacial defects of the SiO2/4H-SiC interface and improves the inversion MOS channel mobility. Effects of the nitridation in NO ambient become more pronounced at high temperatures in general. However, the maximum process temperature in a standard hot-wall oxidation furnace is restricted around 1200oC due to the softening point of quartz. Meanwhile, by use of a cold-wall oxidation furnace, high temperature and short time thermal processes become possible. In this study, we have developed an extremely high temperature (>1400oC) rapid thermal processing for the gate oxidation in the 4H-SiC DIMOSFET fabrication process. The peak MOS channel mobility of lateral MOSFETs on the DIMOSFET chip shows as high as 19cm2/Vs. The specific on-resistance of the device was 12.5mcm2 and the blocking voltage was 950V with gate shorted to the source.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1309-1312
DOI
10.4028/www.scientific.net/MSF.527-529.1309
Citation
R. Kosugi, K. Suzuki, K. Takao, Y. Hayashi, T. Yatsuo, K. Fukuda, H. Ohashi, K. Arai, "Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace", Materials Science Forum, Vols. 527-529, pp. 1309-1312, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Kenji Fukuda, Shinsuke Harada, Junji Senzaki, Mitsuo Okamoto, Yasunori Tanaka, Akimasa Kinoshita, Ryouji Kosugi, Kazu Kojima, Makoto Kato, Atsushi Shimozato, Kenji Suzuki, Yusuke Hayashi, Kazuto Takao, Tomohisa Kato, Shin Ichi Nishizawa, Tsutomu Yatsuo, Hajime Okumura, Hiromichi Ohashi, Kazuo Arai
Abstract:The C(000-1) face of 4H-SiC has a lot of advantages for the power device fabrication such as the highest oxidation ratio and a smooth...
907
Authors: Junji Senzaki, Atsushi Shimozato, Kozutoshi Kajima, Keiko Aryoshi, Takahito Kojima, Shinsuke Harada, Yasunori Tanaka, Hiroaki Himi, Hajime Okumura
Chapter 7: Electrical and Structural Characterization
Abstract:Threshold voltage (VTH) instability, channel mobility and oxide reliability have been investigated for meta-oxide-semiconductor...
621
Authors: Shuji Katakami, Hiroyuki Fujisawa, Kensuke Takenaka, Hitoshi Ishimori, Shinji Takasu, Mitsuo Okamoto, Manabu Arai, Yoshiyuki Yonezawa, Kenji Fukuda
Chapter 10: Device and Application
Abstract:We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high...
958
Authors: Hironori Yoshioka, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura
Chapter IV: SiC Devices and Circuits
Abstract:We have evaluated interface state density (DIT) for ECET > 0.00 eV from the...
745