Paper Title:
Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
  Abstract

A physics based device simulator for detailed numerical analysis of 4H-SiC MOSFETs with an advanced mobility model that accounts for the effects of bulk and surface phonons, surface roughness and Coulomb scattering by occupied interface traps and fixed oxide charges, has been developed. A first principles quasi-2D Coulomb scattering mobility model specifically for SiC MOSFETs has been formulated. Using this, we have been able to extract the interface trap density of states profile for 4H-SiC MOSFETs and have shown that at room temperature, Coulomb scattering controls the total mobility close to the interface. High temperature, low field simulations and experiments show that the current increases with increase in temperature. The effect of Coulomb scattering decreases with increase in temperature causing an increase in the total mobility near the interface at low gate voltages.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1321-1324
DOI
10.4028/www.scientific.net/MSF.527-529.1321
Citation
S. Potbhare, G. Pennington, N. Goldsman, A. J. Lelis, D. B. Habersat, F. B. McLean, J.M. McGarrity, "Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation", Materials Science Forum, Vols. 527-529, pp. 1321-1324, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Amador Pérez-Tomás, Michael R. Jennings, Philip A. Mawby, James A. Covington, Phillippe Godignon, José Millan, Narcis Mestres
Abstract:In prior work we have proposed a mobility model for describing the mobility degradation observed in SiC MOSFET devices, suitable for being...
835
Authors: R. Ramakrishna Rao, Kevin Matocha, Vinayak Tilak
Abstract:The mobility of electrons in the inversion layer of 4H-Silicon Carbide (SiC) MOSFETs is lower than the ideal value due to the various...
797
Authors: Nobuyuki Sano, Takahiko Karasawa
Abstract:The singular nature of the Boltzmann transport equation leads to the boundary layer structure around the virtual source in nano-scale device...
207
Authors: Chao Fang, Liang Yan Chen
Chapter 5: Ceramic
Abstract:Domains and size effect of Curie temperature in BaTiO3 nanoceramics has been studied in this paper. We have calculated Coulomb...
542
Authors: Katsuhiro Kutsuki, Sachiko Kawaji, Yukihiko Watanabe, Shinichiro Miyahara, Jun Saito
Chapter IV: SiC Devices and Circuits
Abstract:We proposed an improved method for evaluating the effective channel mobility (μeff), involving an appropriate definition of...
757