Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1335-1338 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1335 |
| Citation | Philip G. Neudeck et al., 2006, Materials Science Forum, 527-529, 1335 |
| Online since | October, 2006 |
| Authors | Philip G. Neudeck, David J. Spry, Andrew J. Trunek |
| Keywords | 3C-SiC, Bipolar Diode, Breakdown Field, Electroluminescence, Epitaxial Growth, Hetero-Epitaxy, Mesa, p+n Diodes, P-N Junction, Rectifier, Reverse Breakdown |
| Price | US$ 28,- |
This paper reports on initial fabrication and electrical characterization of 3C-SiC p+n junction diodes grown on step-free 4H-SiC mesas. Diodes with n-blocking-layer doping ranging from ~ 2 x 1016 cm-3 to ~ 5 x 1017 cm-3 were fabricated and tested. No optimization of junction edge termination or ohmic contacts was employed. Room temperature reverse characteristics of the best devices show excellent low-leakage behavior, below previous 3C-SiC devices produced by other growth techniques, until the onset of a sharp breakdown knee. The resulting estimated breakdown field of 3C-SiC is at least twice the breakdown field of silicon, but is only around half the breakdown field of <0001> 4H-SiC for the doping range studied. Initial high current stressing of 3C diodes at 100 A/cm2 for more than 20 hours resulted in less than 50 mV change in ~ 3 V forward voltage.
