Paper Title:
Demonstration of a 4H SiC Betavoltaic Cell
  Abstract

A betavoltaic cell in 4H SiC is demonstrated. An abrupt p-n diode structure was used to collect the charge from a 1mCi Ni-63 source. An open circuit voltage of 0.95V and a short circuit current density of 8.8 nA/cm2 were measured in a single p-n junction. An efficiency of 3.7% was obtained. A simple photovoltaic type model was used to explain the results. Good correspondence with the model was obtained. Fill factor and backscattering effects were included. Efficiency was limited by edge recombination and poor fill factor.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1351-1354
DOI
10.4028/www.scientific.net/MSF.527-529.1351
Citation
M.V.S. Chandrashekhar, C. I. Thomas, H. Li, M. G. Spencer, A. Lal, "Demonstration of a 4H SiC Betavoltaic Cell", Materials Science Forum, Vols. 527-529, pp. 1351-1354, 2006
Online since
October 2006
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