Paper Title:
Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
  Abstract

4H-SiC PiN rectifiers with implanted anode and single-zone JTE were fabricated using AlN capped anneal. The surface damage during the high temperature activation anneal is significantly reduced by using AlN capped anneal. The forward drop of the PiN rectifiers at 100A/cm2 is 3.0V while the leakage current is less than 10-7A/cm2 up to 90% breakdown voltage at room temperature. With 6μm thick and 2×1016cm-3 doped drift layer, the PiN rectifiers can achieve near ideal breakdown voltage up to 1050V. Hole impact ionization rate was extracted and compared with previously reported results.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1367-1370
DOI
10.4028/www.scientific.net/MSF.527-529.1367
Citation
L. Zhu, P. A. Losee, T. P. Chow, K. A. Jones, C. Scozzie, M. H. Ervin, P. B. Shah, M. A. Derenge, R.D. Vispute, T. Venkatesan, A. K. Agarwal, "Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing", Materials Science Forum, Vols. 527-529, pp. 1367-1370, 2006
Online since
October 2006
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Price
$32.00
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