Paper Title:
Advances in SiC GTO Development and Its Applications
  Abstract

To achieve large current capability in spite of present small SiC devices that are limited by various crystal defects, focus was placed on SiC GTO thyristor and SICGT have been developed as an advanced SiC GTO. SICGTs with current capability of 1.6-100 A and blocking voltage of 3-12.7 kV and a 3 phase PWM SICGT inverter with output power of 35 kVA have been successfully developed. Furthermore, application of the SiC inverter aimed to a load leveling system was demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1391-1396
DOI
10.4028/www.scientific.net/MSF.527-529.1391
Citation
Y. Sugawara, "Advances in SiC GTO Development and Its Applications", Materials Science Forum, Vols. 527-529, pp. 1391-1396, 2006
Online since
October 2006
Export
Price
$35.00
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