Paper Title:
A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
  Abstract

We report on the development of the first 1 cm x 1 cm SiC Thyristor chip capable of blocking 5 kV. This demonstrates the present quality of the SiC substrate and epitaxial material. A forward drop of 4.1 V at 100 A and 25°C has been measured. The turn-on delay is found to be a strong function of the gate current. At a gate current of 0.5 A, a turn-on delay of 250 ns is observed for an anode to cathode current of 200 A. The turn-on delay reduces to 72 ns for an IG = 1.5 A. The turn-on rise time is a strong function of the anode to cathode voltage, VAK. At VAK =230 V, the turn-on rise-time is 300 ns for IAK =200 A. The rise-time reduces to 26 ns for VAK = 500 V.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1397-1400
DOI
10.4028/www.scientific.net/MSF.527-529.1397
Citation
A. K. Agarwal, S. Krishnaswami, B. Damsky, J. Richmond, C. Capell, J. W. Palmour, S. H. Ryu, "A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules", Materials Science Forum, Vols. 527-529, pp. 1397-1400, 2006
Online since
October 2006
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