Paper Title:
Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
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Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1405-1408
DOI
10.4028/www.scientific.net/MSF.527-529.1405
Citation
Q. C. J. Zhang, S. H. Ryu, C. Jonas, A. K. Agarwal, J. W. Palmour, "Simulations of 10 kV Trench Gate IGBTs on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1405-1408, 2006
Online since
October 2006
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Price
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