1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1417-1420 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1417 |
| Citation | Jian Hui Zhang et al., 2006, Materials Science Forum, 527-529, 1417 |
| Online since | October, 2006 |
| Authors | Jian Hui Zhang, Jian Wu, Petre Alexandrov, Terry Burke, Kuang Sheng, Jian H. Zhao |
| Keywords | Bipolar Junction Transistor (BJT), High Temperature, High Voltage (HV), Low On-Resistance |
| Price | US$ 28,- |
This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.
