Paper Title:
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
  Abstract

This paper reports recent progress in the development of high power 4H-SiC BJTs based on an improved device design and fabrication scheme. Near theoretical limit high blocking voltage of VCEO=1,836 V has been achieved for 4H-SiC BJTs based on a drift layer of only 12 μm, doped to 6.7x1015 cm-3. The collector current measured for a single cell BJT with an active area of 0.61 mm2 is up to IC=9.87 A (JC=1618 A/cm2). The collector current is 7.64 A (JC=1252 A/cm2) at VCE=5.9 V in the saturation region, corresponding to an absolute specific on-resistance (RSP_ON) of 4.7 m9·cm2. From VCE=2.4 V to VCE= 5.8 V, the BJT has a differential RSP_ON of only 3.9 m9·cm2. The current gain is about 8.8 at Ic=5.3 A (869 A/cm2). This 4H-SiC BJT shows a V2/RSP_ON of 717 MW/cm2, which is the highest value reported to date for high-voltage and high-current 4H-SiC BJTs. A verylarge area 4H-SiC BJT with an active area of 11.3 mm2 is also demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1417-1420
DOI
10.4028/www.scientific.net/MSF.527-529.1417
Citation
J. H. Zhang, J. Wu, P. Alexandrov, T. Burke, K. Sheng, J. H. Zhao, "1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor", Materials Science Forum, Vols. 527-529, pp. 1417-1420, 2006
Online since
October 2006
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Price
$35.00
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