Paper Title:
4H-SiC Bipolar Transistors with UHF and L-Band Operation
  Abstract

We report for the first time on RF SiC BJTs fabricated on semi-insulating (SI) substrates with L-band performance. Small-periphery (4x150μm) devices were tested using on-wafer load-pull measurements up to 1.5GHz. Under pulsed conditions, the devices exhibited 10dB of power gain at 1GHz and a peak power density of 2.3W/mm (1.4W) with a 100μs pulse width and a 1% duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W). The load-pull measurements were performed up to 125oC, which resulted in a 1 dB reduction of power gain compared to the room temperature performance. Results at 0.5 and 1.5 GHz are presented as well.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1421-1424
DOI
10.4028/www.scientific.net/MSF.527-529.1421
Citation
I. Perez-Wurfl, F. Zhao, C. F. Huang, J. Torvik, B. Van Zeghbroeck, "4H-SiC Bipolar Transistors with UHF and L-Band Operation", Materials Science Forum, Vols. 527-529, pp. 1421-1424, 2006
Online since
October 2006
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Price
$32.00
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