Current Gain Dependence on Emitter Width in 4H-SiC BJTs |
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| Journal | Materials Science Forum (Volumes 527 - 529) |
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| Volume | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1425-1428 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1425 |
| Citation | Martin Domeij et al., 2006, Materials Science Forum, 527-529, 1425 |
| Online since | October, 2006 |
| Authors | Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner |
| Keywords | Bipolar Junction Transistor (BJT), Current Gain, Device Simulation, Emitter-Size Effect, Surface Recombination |
| Abstract | This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction. |
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