Paper Title:
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
  Abstract

This paper reports the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain β=64 and a breakdown voltage of 1100 V. The high β value is attributed to high material quality obtained after a continuous epitaxial growth of the base-emitter junction. The current gain of the BJTs increases with increasing emitter width indicating a significant influence of surface recombination. This “emitter-size” effect is in good agreement with device simulations including recombination in interface states at the etched termination of the baseemitter junction.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1425-1428
DOI
10.4028/www.scientific.net/MSF.527-529.1425
Citation
M. Domeij, H. S. Lee, C. M. Zetterling, M. Östling, A. Schöner, "Current Gain Dependence on Emitter Width in 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1425-1428, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Martin Domeij, Erik Danielsson, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling
Abstract:The current gain (b) of 4H-SiC BJTs as function of collector current (IC) has been investigated by DC and pulsed measurements and by device...
889
Authors: Erik Danielsson, Martin Domeij, Hyung Seok Lee, Carl Mikael Zetterling, Mikael Östling, Adolf Schöner, Christer Hallin
Abstract:4H-SiC BJTs were fabricated using epitaxial regrowth instead of ion implantation to form a highly doped extrinsic base layer necessary for a...
905
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Mikael Östling, Einar Ö. Sveinbjörnsson
Abstract:The effect of the different types of passivation layers on the current gain of SiC BJTs has been investigated. Measurements have been...
631
Authors: Hyung Seok Lee, Martin Domeij, Carl Mikael Zetterling, Reza Ghandi, Mikael Östling, Fredrik Allerstam, Einar Ö. Sveinbjörnsson
Abstract:This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60...
1151
Authors: Kenichi Nonaka, Akihiko Horiuchi, Yuki Negoro, Kensuke Iwanaga, Seiichi Yokoyama, Hideki Hashimoto, Masashi Sato, Yusuke Maeyama, Masaaki Shimizu, Hiroaki Iwakuro
Abstract:A new 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination structure: SSR-BJT has been proposed to improve the common...
821