Paper Title:
Optimization of the Specific On-Resistance of 4H-SiC BJTs
  Abstract

We evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific onresistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1429-1432
DOI
10.4028/www.scientific.net/MSF.527-529.1429
Citation
S. Balachandran, T. P. Chow, A. K. Agarwal, "Optimization of the Specific On-Resistance of 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1429-1432, 2006
Online since
October 2006
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Price
$32.00
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