Paper Title:
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
  Abstract

This paper summarizes the recent demonstration of 3200 V, 10 A BJT devices with a high common emitter current gain of 44 in the linear region, and a specific on-resistance of 8.1 mΩ- cm2 (10 A at 0.90 V with a base current of 350 mA and an active area of 0.09 cm2). The onresistance increases to 40 mΩ-cm2 at 350°C, while the DC current gain decreases to 30. A sharp avalanche behavior was observed with a leakage current of 10 μA at a collector voltage of 3.2 kV.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1437-1440
DOI
10.4028/www.scientific.net/MSF.527-529.1437
Citation
S. Krishnaswami, A. K. Agarwal, J. Richmond, C. Capell, S. H. Ryu, J. W. Palmour, B. Geil, D. Katsis, C. Scozzie, "High Temperature Characterization of 4H-SiC Bipolar Junction Transistors", Materials Science Forum, Vols. 527-529, pp. 1437-1440, 2006
Online since
October 2006
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Price
$32.00
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