Paper Title:
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
  Abstract

For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the collector current IC were measured at elevated temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax = 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a model which takes into account the main processes affecting the current gain. Minority carrier lifetimes and surface recombination velocity were obtained by means of those considerations.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1441-1444
DOI
10.4028/www.scientific.net/MSF.527-529.1441
Citation
P. A. Ivanov, M. E. Levinshtein, A. K. Agarwal, S. Krishnaswami, J. W. Palmour, "Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs", Materials Science Forum, Vols. 527-529, pp. 1441-1444, 2006
Online since
October 2006
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Price
$32.00
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