Paper Title:
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1441-1444 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1441 |
| Citation | Pavel A. Ivanov et al., 2006, Materials Science Forum, 527-529, 1441 |
| Online since | October, 2006 |
| Authors | Pavel A. Ivanov, Michael E. Levinshtein, Anant K. Agarwal, Sumi Krishnaswami, John W. Palmour |
| Keywords | Bipolar Junction Transistor (BJT), Current Gain |
| Price | US$ 28,- |
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Abstract
For 1-kV, 30-A 4H-SiC epitaxial emitter npn bipolar junction transistors, the dependence of the common-emitter current gain β on the collector current IC were measured at elevated temperatures. The collector-emitter voltage was fixed (at 100 V voltage) to provide an active operation mode at all collector currents varying in a wide range from 150 mA to 40 A (current densities 24 - 6350 A/cm2). The maximum room temperature current gain was measured to be βmax = 40 (IC = 7 A) while βmax = 32 (IC = 10 A) at 250oC. The β-IC dependences were simulated using a model which takes into account the main processes affecting the current gain. Minority carrier lifetimes and surface recombination velocity were obtained by means of those considerations.
