Paper Title:
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
  Abstract

This paper reports on a 400 watt boost converter using a SiC BJT and a SiC MOSFET as the switch and a 6 Amp and a 50 Amp SiC Schottky diode as the output rectifier. The converter was operated at 100 kHz with an input voltage of 200 volts DC and an output voltage of 400 volts DC. The efficiency was tested with an output loaded from 50 watts to 400 watts at baseplate temperatures of 25°C, 100°C, 150°C and 200°C. The results show the converter in all cases capable of operating at temperatures beyond the range possible with silicon power devices. While the converter efficiency was excellent in all cases, the SiC MOSFET and 6 Amp Schottky diode had the highest efficiency. Since the losses in a boost converter are dominated by the switching losses and the switching losses of the SiC devices are unaffected by temperature, the efficiency of the converter was effectively unchanged as a function of temperature.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1445-1448
DOI
10.4028/www.scientific.net/MSF.527-529.1445
Citation
J. Richmond, S. H. Ryu, S. Krishnaswami, A. K. Agarwal, J. W. Palmour, B. Geil, D. Katsis, C. Scozzie, "400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature", Materials Science Forum, Vols. 527-529, pp. 1445-1448, 2006
Online since
October 2006
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Price
$32.00
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