Paper Title:
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
  Abstract

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1449-1452
DOI
10.4028/www.scientific.net/MSF.527-529.1449
Citation
Y. Sui, G. G. Walden, X. K. Wang, J. A. Cooper, "Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices", Materials Science Forum, Vols. 527-529, pp. 1449-1452, 2006
Online since
October 2006
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