Paper Title:
SiC-Based MOSFETs for Harsh Environment Emissions Sensors
  Abstract

Depletion-mode 4H-SiC FETs were fabricated for use as harsh environment gas sensors. To enable sensitivity to NOx, O2 and H2 gases, metal oxide catalysts such as InOx were integrated into the gate of the device. The FETs had a total area of approximately 1 mm2. Devices with various gate widths and lengths were fabricated and tested, with sensor performance of 5% or greater in current change from the baseline resulting from designs having a length to width ratio of around 50.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1457-1460
DOI
10.4028/www.scientific.net/MSF.527-529.1457
Citation
P. M. Sandvik, M. Ali, V. Tilak, K. Matocha, T. Stauden, J. B. Tucker, J. Deluca, O. Ambacher, "SiC-Based MOSFETs for Harsh Environment Emissions Sensors", Materials Science Forum, Vols. 527-529, pp. 1457-1460, 2006
Online since
October 2006
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Price
$32.00
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