Paper Title:
Development of Ultra High Sensitivity UV Silicon Carbide Detectors
  Abstract

A variety of silicon carbide (SiC) detectors have been developed to study their sensitivity, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, SiC photo-detectors show excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are many orders of magnitude higher than the D* of other solid state detectors, and for the first time, comparable to that of photomultiplier tubes (PMTs). SiC APDs have also been fabricated to pursue the ultimate sensitivity. By operating the SiC APDs at a linear mode gain over 106, single photoncounting avalanche photodiodes (SPADs) in UV have been demonstrated.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1461-1464
DOI
10.4028/www.scientific.net/MSF.527-529.1461
Citation
F. Yan, X. B. Xin, P. Alexandrov, C. M. Stahle, B. Guan, J. H. Zhao, "Development of Ultra High Sensitivity UV Silicon Carbide Detectors", Materials Science Forum, Vols. 527-529, pp. 1461-1464, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Antonella Sciuto, Fabrizio Roccaforte, Salvatore Di Franco, Vito Raineri, S.F. Liotta, Sergio Billotta, Giovanni Bonanno, Massimiliano Belluso
Abstract:The fabrication of high sensitive diodes array is very attractive for spectroscopic and astronomical UV imaging applications, particularly...
945
Authors: Stanislav I. Soloviev, Alexey V. Vert, Jody Fronheiser, Peter M. Sandvik
Abstract:In this work, solar-blind UV 4H-SiC avalanche photodetectors were fabricated and tested in linear and Geiger modes. APDs with both PIN and...
873
Authors: Alexey V. Vert, Stanislav I. Soloviev, Jody Fronheiser, Peter M. Sandvik
Abstract:4H-SiC single photon avalanche diodes are reported. A separate absorption and multiplication non-reach through device structure was optimized...
877
Authors: Alexey V. Vert, Stanislav I. Soloviev, Peter M. Sandvik
Abstract:We present overview of achieved results on 4H-SiC avalanche photodiodes (APDs) and arrays. Cost-effective solar-blind optical filter allows...
543
Authors: Hua Lü
Chapter 2: Devices and Instruments for Detection, Monitoring and Measuring
Abstract:In this paper, we experimentally characterize the Inga As/Imp avalanche photodiode (APD), which is working in Geiger mode, so as to choose...
273