Paper Title:
Radiation Hard Devices Based on SiC
  Abstract

The effect of irradiation with protons, electrons, neutrons, x-ray radiation and gamma-ray photons as well as with different ions on properties of starting SiC material and devices based on it was studied. The rectifying properties of the diode structures, which degraded as a result of irradiation with high energy particles, were recovered at higher operation temperatures. The transistor structure SiC-based detectors were realized with the signal amplification by a factor of tens under irradiation. The energy resolution of 0.34 %, commensurable with Si-detectors, has been achieved for SiC detectors and is correct for all classes of short range ions. The maximum signal amplitude corresponds, in SiC, to a mean electron-hole pair creation energy of 7.7 eV.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1473-1476
DOI
10.4028/www.scientific.net/MSF.527-529.1473
Citation
E. V. Kalinina, A. M. Strel'chuk, A. A. Lebedev, N. B. Strokan, A. M. Ivanov, G. Kholuyanov , "Radiation Hard Devices Based on SiC", Materials Science Forum, Vols. 527-529, pp. 1473-1476, 2006
Online since
October 2006
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Price
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