Paper Title:
Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
| Periodical | Materials Science Forum (Volumes 527 - 529) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2005 |
| Edited by | Robert P. Devaty, David J. Larkin and Stephen E. Saddow |
| Pages | 1501-1504 |
| DOI | 10.4028/www.scientific.net/MSF.527-529.1501 |
| Citation | Mikhail Anikin et al., 2006, Materials Science Forum, 527-529, 1501 |
| Online since | October, 2006 |
| Authors | Mikhail Anikin, Didier Chaussende, Etienne Pernot, O. Chaix-Pluchery, H. Roussel, Michel Pons, Roland Madar |
| Keywords | Aluminum Nitride (AlN), Bulk Growth, Crack, Sublimation |
| Price | US$ 28,- |
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Abstract
AlN is considered as the most suitable substrate material for further development of high quality and high performance nitride-based micro- and opto-electronics. AlN ingots are often grown on SiC seeds. To solve the formation of cracks due to the difference in lattice parameters between seed and crystal we chose to “adapt” the lattice mismatch by a buffer layer of the (AlN)x(SiC)1-x solid solution. This paper gives some inputs on the growth of AlN and the solid solution by the sublimation technique, in terms of materials compatibility, hetero- and homo-epitaxial growth of AlN and on the preparation of crack-free solid solution single crystals.
