Paper Title:
Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
  Abstract

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1525-1528
DOI
10.4028/www.scientific.net/MSF.527-529.1525
Citation
W. Huang, T. Khan, T. P. Chow, "Asymmetric Interface Densities on n and p Type GaN MOS Capacitors", Materials Science Forum, Vols. 527-529, pp. 1525-1528, 2006
Online since
October 2006
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Price
$32.00
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