Paper Title:
Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy
  Abstract

It is generally accepted that the Schottky barrier height (SBH) is affected by the initial band bending at the bare nGaN surface as well as by an additional contribution following metal deposition. In this work the effect of processing used for device fabrication on the surface band bending of bare c-plane nGaN was studied by surface potential electric force microscopy (SP-EFM). An increase of the initial upward band bending from 1.0 ± 0.1eV for the as-grown GaN to 1.9 ± 0.1eV after RTA treatment in N2 ambient was observed. No significant dependence of band bending on N2 or Ar as ambient gas during the RTA treatment was observed. The increase of the initial upward band bending was also confirmed by photoluminescence (PL) measurements. We suggest that the RTA treatment causes a high density of surface states, possibly as a result of high temperature reaction of ambient gas and remnant contamination.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1529-1532
DOI
10.4028/www.scientific.net/MSF.527-529.1529
Citation
S. Chevtchenko, Q. Fan, C. W. Litton, A.A. Baski, H. Morkoç, "Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy", Materials Science Forum, Vols. 527-529, pp. 1529-1532, 2006
Online since
October 2006
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Jae Yeong Heo, Hyeong Joon Kim
Abstract:Various annealing conditions after film deposition have a great effect on electrical and structural properties of low-k films. In this work,...
323
Authors: Eui Tae Kim, Anupam Madhukar
Abstract:We discuss the growth kinetics of InAs/GaAs self-assembled quantum dots (QDs) using two different InAs deposition rates, relatively fast...
539
Authors: Zhan Guo Li, Ming Hui You, Guo Jun Liu, Xin Gao, Lin Li, Zhi Peng Wei, Mei Li, Yong Wang, Xiao Hua Wang, Lian He Li
Chapter 1: Multifunctional Materials
Abstract:We investigate the growth of low-density(~4×108cm-2) InAs quantum dots (QDs) on GaAs by molecular beam...
12
Authors: Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, Vinh Le Thanh
Chapter 8: Diffusion in Electronic Materials
Abstract:An alternative solution for producing logic devices in microelectronics is spintronics (SPIN TRansport electrONICS). It relies on the fact...
439