Paper Title:
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
  Abstract

4H-SiC epitaxial layers on Carbon-face (C-face) substrates were grown by a low-pressure hot-wall type chemical vapor deposition system. The C-face substrates were prepared by fine mechanical polishing using diamond abrasives with the grit size of 0.25 %m and in-situ HCl etching at 1400°C, which produced surface roughness of 0.27 nm. The use of the smooth substrates made it possible to decrease the substrate temperature and specular surface morphologies were realized at C/Si ratios of 1.5 or less both for a substrate temperature of 1550°C and for that of 1500°C. Surface roughness of 0.26 nm and the residual donor concentration of 6.7×1014 cm-3 were obtained for a C-face epitaxial layer grown at a C/Si ratio of 1.5 and at a substrate temperature of 1550°C. Schottky barrier diodes were fabricated on a non-doped C-face epitaxial layer grown at 1500°C and it was verified that a high quality metal-semiconductor interface was formed on the epitaxial layer.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
153-158
DOI
10.4028/www.scientific.net/MSF.527-529.153
Citation
T. Aigo, M. Sawamura, T. Fujimoto, M. Katsuno, H. Yashiro, H. Tsuge, M. Nakabayashi, T. Hoshino, N. Ohtani, "4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness", Materials Science Forum, Vols. 527-529, pp. 153-158, 2006
Online since
October 2006
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Price
$32.00
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