Paper Title:
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
  Abstract

The investigated AlGaN epitaxial layers were grown by hydride vapor phase epitaxy (HVPE) on a commercial P+ SiC substrate or on an N+ SiC Lely substrate with a p+ SiC layer previously grown by sublimation epitaxy. To investigate the electrical characteristics of the n-p heterojunction, mesa structures of 100, 200 and 1500 microns in diameter were fabricated by reactive ion etching. Investigation of electrical characteristics shows good quality of grown n- AlGaN/p-SiC heterojunctions. This shows applicability of this technological combination for producing n-AlGaN/p-SiC bipolar or FET transistors.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1537-1541
DOI
10.4028/www.scientific.net/MSF.527-529.1537
Citation
A. A. Lebedev, O. Y. Ledyaev, A. M. Strel'chuk, A. N. Kuznetsov, A.E. Cherenkov, A.E. Nikolaev, A.S. Zubrilov, N. V. Seredova, A.A. Volkova, "Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures", Materials Science Forum, Vols. 527-529, pp. 1537-1541, 2006
Online since
October 2006
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$32.00
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