Paper Title:
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
  Abstract

Characterization of n+-GaN/p−-SiC and n+-GaN/p+-SiC heterojunctions as well as fabrication of GaN/SiC heterojunction bipolar transistors (HBTs) using these heterojunctions is presented. The electroluminescence spectrum from n+-GaN/p+-SiC heterojunction diodes under forward bias clearly indicates electron injection from n+-GaN into p+-SiC. HBTs consisting of n+-GaN emitter /p+-SiC base/n−-SiC collector/n+-SiC substrate have been fabricated. Although clear common-base properties were obtained, the current gain was very low (10-4). SiC homojunction bipolar junction transistors (BJT) using the same base-collector junction exhibited a current gain value of 0.5, suggesting the low current gain of GaN/SiC HBTs originates from low emitter efficiency.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1545-1548
DOI
10.4028/www.scientific.net/MSF.527-529.1545
Citation
J. Suda, Y. Nakano, S. Shimada, K. Amari, T. Kimoto, "Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors", Materials Science Forum, Vols. 527-529, pp. 1545-1548, 2006
Online since
October 2006
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