Paper Title:
GaN Resistive Gas Sensors for Hydrogen Detection
  Abstract

We report on the fabrication and testing of GaN resistive gas sensors for hydrogen detection. The Si-doped n-type GaN was grown by organometallic vapor phase epitaxy (OMVPE) on c-plane sapphire substrates. The device structure is simply a pair of metal ohmic contact pads. The sensors are sensitive to H2 gas over a wide range of concentration: the lowest concentration tested being ~0.1% H2 (in Ar), well below the lower combustion limit in air. No saturation of the signal is observed up to 100% H2 flow. In the continuous operation mode with varying H2 concentration, a clear and sharp response was recorded with no memory effects during ramping up and down cycles of H2 concentration. The change in current at a fixed voltage to hydrogen was found to change with sensor geometry. The possible gas sensing mechanisms are still under investigation.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1553-1556
DOI
10.4028/www.scientific.net/MSF.527-529.1553
Citation
F. Yun, T.J. Fawcett, S. Chevtchenko, Y.T. Moon, H. Morkoç, J.T. Wolan, "GaN Resistive Gas Sensors for Hydrogen Detection", Materials Science Forum, Vols. 527-529, pp. 1553-1556, 2006
Online since
October 2006
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