Paper Title:
Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
  Abstract

3C-(Si1-xC1-y)Gex+y ternary alloys were grown on 8.5° off axis 4H-SiC substrates by solid source molecular beam epitaxy in a temperature range between 750°C and 950°C. Energy dispersive X-ray (EDX) analysis revealed a decrease of the Ge incorporation versus substrate temperature. This effect is due to the fixed Si/Ge ratio during the epitaxial growth. The Ge distribution within the grown epitaxial layers was found to be nearly homogeneous. The investigations by atomic location by channeling enhanced microanalysis allowed the conclusion that Ge is located mainly at Si lattice sites.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1559-1562
DOI
10.4028/www.scientific.net/MSF.527-529.1559
Citation
J. Pezoldt, T. Kups, P. Weih, T. Stauden, O. Ambacher, "Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC", Materials Science Forum, Vols. 527-529, pp. 1559-1562, 2006
Online since
October 2006
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Price
$32.00
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