Paper Title:
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
  Abstract

The epitaxial relationship of Si deposited on 3C-SiC was studied using both free standing 3C-SiC(100) material from Hoya and 3C-SiC thin layers deposited on Si(100) as substrates. The conditions of Si growth were varied depending on the substrate. When Si is deposited at 1000°C on (001) 3C-SiC, it is in perfect epitaxial relation with the SiC layer [100]Si//[100]SiC and [001]Si//[001]SiC. After a 20 ms flash lamp pulse on the same sample, which has the effect of fast melting of the Si top layer only, the defects in the Si are eliminated. Using free standing 3C-SiC, the deposition temperature was not limited by the Si melting point so that it was fixed at 1500°C in order to form a set of Si liquid droplets on the surface with diameters ranging from 5 to 20 μm. Surprisingly more than 60% of the Si droplets exhibit the epitaxial relation [110]Si//[001]SiC and [111]Si//[110]SiC after crystallization. The occurrence of this epitaxial relationship can be understood in terms of lattice mismatch reduction from 20% to 18.3%. The conditions of crystallization, most probably the cooling rate, seem to have a strong effect on Si orientation.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1563-1566
DOI
10.4028/www.scientific.net/MSF.527-529.1563
Citation
G. Ferro, E. K. Polychroniadis, D. Panknin, W. Skorupa, J. Stoemenos, Y. Monteil, "Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)", Materials Science Forum, Vols. 527-529, pp. 1563-1566, 2006
Online since
October 2006
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$32.00
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