Paper Title:
Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique
  Abstract

ZnO bulk crystal wafers, undoped and doped with various impurities of Ga, Er, Co, Ho, Fe, Mn, and co-doped Mg-Li, have been prepared by a modified melt growth method, and characterized by optical techniques of Raman scattering, photoluminescence and UV-visible transmission. Their wurtzite structures were confirmed, with a small degree of crystalline imperfection. It is shown that with some dopants, such as, Co and Fe, the electronic energy gap is affected much less than the optical absorption gap. Computer analysis has helped greatly in obtaining useful information of the optical properties of the ZnO bulk materials.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1567-1570
DOI
10.4028/www.scientific.net/MSF.527-529.1567
Citation
Z. C. Feng, J.W. Yu, J.B. Wang, R. Varatharajan, B. Nemeth, J. Nause, I. T. Ferguson, W. J. Lu, W.E. Collins, "Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique", Materials Science Forum, Vols. 527-529, pp. 1567-1570, 2006
Online since
October 2006
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Price
$32.00
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