Paper Title:
Role of Oxygen in Growth of Carbon Nanotubes on SiC
  Abstract

Carbon nanotubes (CNTs) grown on SiC are metal-free, well-aligned, and with low structural defects. In this study, CNT formation on SiC is examined in high vacuum (10-5torr) and ultra-high vacuum (10-8torr). Multi-wall carbon nanotubes and graphitic structures are the main products on the SiC surface at 1400-1800°C in 10-5torr. Under ultra-high vacuum, the decomposition rate of SiC is much lower than in high vacuum, indicating that SiC is decomposed by oxidation reaction. Using X-ray photoelectron spectroscopy (XPS), the intensity of the O1s peak at 530.3 eV decreases with increasing take-off angle, indicating that this oxygen species exists on the walls of CNTs. The results show that oxygen with a low pressure not only oxidizes SiC, but also forms a highly thermally stable carbon-oxygen compound, and interacts with the CNTs at high temperatures.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1575-1578
DOI
10.4028/www.scientific.net/MSF.527-529.1575
Citation
W. J. Lu, J. Boeckl, W.C. Mitchel, J. Rigueur, W.E. Collins, "Role of Oxygen in Growth of Carbon Nanotubes on SiC", Materials Science Forum, Vols. 527-529, pp. 1575-1578, 2006
Online since
October 2006
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$32.00
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