Paper Title:
Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition
  Abstract

Aligned carbon nanotubes (CNT’s) are formed on the surface of silicon carbide (SiC) wafers during high temperature anneals. The exposed 4H SiC surface transforms into CNT’s for temperatures in the range of 1400-1700°C and under moderate vacuum conditions (10-2 – 10-5 torr). The rate of formation on the C-face (0001,‾) is about three times the rate on the Si-face (0001), but both rates increase with anneal temperature. SEM, TEM and Raman scattering measurements have confirmed the presence of both single-wall and multi-wall CNT’s. The carbon source is believed to be residual carbon from the SiC left on the surface after preferential evaporation of Si. CNT formation is believed to be catalyzed by low concentrations of residual oxygen in the chamber. Subsequent I-V measurements provide insight into the electrical characteristics of the CNT’s and the SiC/CNT interface.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
1579-1582
DOI
10.4028/www.scientific.net/MSF.527-529.1579
Citation
J. Boeckl, W.C. Mitchel, W. J. Lu, J. Rigueur, "Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition", Materials Science Forum, Vols. 527-529, pp. 1579-1582, 2006
Online since
October 2006
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$32.00
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