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SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD Diamond

Journal Materials Science Forum (Volumes 527 - 529)
Volume Silicon Carbide and Related Materials 2005
Edited by Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages 1587-1590
DOI 10.4028/www.scientific.net/MSF.527-529.1587
Citation D. Doneddu et al., 2006, Materials Science Forum, 527-529, 1587
Online since October, 2006
Authors D. Doneddu, Owen J. Guy, R.M. Baylis, L. Chen, P.R. Dunstan, Philip A. Mawby, C. Fabrizio Pirri, Sergio Ferrero, D. Twitchen, A. Tajani, M. Schwitters
Keywords Chemical Vapor Deposition (CVD), Cr Ohmic Contact, CTLM, Diamond, SNOM, Surface Morphology
Abstract

The formation of metal/diamond Ohmic contacts is essential to most electronic devices. In order to form a good Ohmic contact to diamond a carbide-forming metal such as Ti or Cr is necessary. In this study, Cr/Au contacts to heavily boron-doped single crystal CVD diamond were fabricated by subsequent deposition of Cr and Au. The surface morphology and specific contact resistance of diamond/Cr/Au contacts has been investigated. The reaction between the Cr metal and the diamond during annealing gives an improved specific contact resistance. However, this reaction also causes a significant change in the surface morphology. The surface morphology of singlecrystal diamond is shown to greatly influence the properties of metal contacts to diamond. Shearforce mode atomic force microscopy (AFM) investigations have been used to examine the diamond surface before metallization, and after removing the metal contact. The initial diamond surface was predominantly smooth, apart from some scratches from the polishing process. Surface RMS roughness values of around 0.4nm were found. Correlation between surface morphology and contact resistance has been found, with rougher surfaces exhibiting a barrier to conduction. An understanding of the contact formation process is an essential step in achieving high quality Ohmic contacts which are vital in the fabrication of high quality diamond devices.

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