Paper Title:
SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
  Abstract

Experimental results are presented for SiC epitaxial layer growth employing a large-area, up to 8x100-mm, warm-wall planetary SiC-VPE reactor. This high-throughput reactor has been optimized for the growth of uniform 0.01 to 80-micron thick, specular, device-quality SiC epitaxial layers with low background doping concentrations of <1x1014 cm-3 and intentional p- and n-type doping from ~1x1015 cm-3 to >1x1019 cm-3. Intrawafer layer thickness and n-type doping uniformity (σ/mean) of ~2% and ~8% have been achieved to date in the 8x100-mm configuration. The total range of the average intrawafer thickness and doping within a run are approximately ±1% and ±6% respectively.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
159-162
DOI
10.4028/www.scientific.net/MSF.527-529.159
Citation
A. A. Burk, M. J. O'Loughlin, M. J. Paisley, A. R. Powell, M.F. Brady, R.T. Leonard, D.A. McClure, "SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers", Materials Science Forum, Vols. 527-529, pp. 159-162, 2006
Online since
October 2006
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Price
$32.00
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