Paper Title:
Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
  Abstract

The growth rate of 4H-SiC epi layers has been increased by a factor 3 (up to 18μm/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. An optimized process without the addition of HCl is reported for comparison. The Schottky diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 °C, have electrical characteristics comparable with the standard epitaxial process with the advantage of an epitaxial growth rate three times higher.

  Info
Periodical
Materials Science Forum (Volumes 527-529)
Edited by
Robert P. Devaty, David J. Larkin and Stephen E. Saddow
Pages
163-166
DOI
10.4028/www.scientific.net/MSF.527-529.163
Citation
F. La Via, G. Galvagno, A. Firrincieli, F. Roccaforte, S. Di Franco, A. Ruggiero, M. Barbera, R. Reitano, P. Musumeci, L. Calcagno, G. Foti, M. Mauceri, S. Leone, G. Pistone, F. Portuese, G. Abbondanza, G. Abagnale, G. L. Valente, D. Crippa, "Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process", Materials Science Forum, Vols. 527-529, pp. 163-166, 2006
Online since
October 2006
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